1 TGP2103 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features and performance ? frequency range: 8.5 - 11 ghz ? 5db nominal insertion loss ? 2deg rms phase error @ 9.5ghz ? 0.2db rms amp. error @ 9.5ghz ? negative control voltage ? 0.5m mesfet technology ? chip dimensions: 3.25 x 3.48 x 0.15 mm (0.128 x 0.137 x 0.006 inches) measured performance primary applications ? military radar ? transmit / receive description the triquint TGP2103 is a 6-bit digital phase shifter mmic design using triquint?s proven 0.5 m mesfet process. the TGP2103 will support a variety of x-band phased array applications including military radar. the 6-bit design utilizes a compact topology that achieves a 11.31mm 2 die area and high performance. the TGP2103 provides a 6-bit digital phase shift function with a nominal 5db insertion loss and 2 rms phase shift error over a bandwidth of 8.5-11ghz. the TGP2103 requires a minimum of off- chip components and operates with a -5v control voltage. each device is rf tested on-wafer to ensure performance compliance. the device is available in chip form. lead-free and rohs compliant 8.5 - 11 ghz 6-bit phase shifter datasheet subject to change without notice
2 TGP2103 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings symbol parameter value notes v c control voltage range -8v to 0v 1 / 2 / i c control supply current 1 ma 1 / 2 / p in input continuous wave power 20 dbm 1 / 2 / p d power dissipation 0.1 w 1 / 2 / t ch operating channel temperature 200 c 3 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d 3 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. table ii rf characterization table (t a = 25 c, nominal) (v c = -5v) parameter test conditions typ units notes insertion loss 8.5 ? 11ghz 5 db peak amplitude error 8.5 ? 11ghz 0.5 db rms amplitude error 8.5 ? 11ghz 0.2 db peak phase shift error 8.5 ? 11ghz 3 deg rms phase shift error 8.5 ? 11ghz 2 deg input return loss 8.5 ? 11ghz 15 db output return loss 8.5 ? 11ghz 12 db note: table ii lists the rf characteristics of typical devices as determined by fixtured measurements.
3 TGP2103 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com preliminary measured data
4 TGP2103 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com preliminary measured data
5 TGP2103 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com preliminary measured data
6 TGP2103 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com state table
7 TGP2103 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing
8 TGP2103 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. chip assembly & bonding diagram
9 TGP2103 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 c. assembly process notes TGP2103
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